Textile patterning for subtractively-patterned self-aligned interconnects, plugs, and vias

ABSTRACT

Embodiments of the invention include methods of forming a textile patterned hardmask. In an embodiment, a first hardmask and a second hardmask are formed over a top surface of an interconnect layer in an alternating pattern. A sacrificial cross-grating may then be formed over the first and second hardmasks. In an embodiment, portions of the first hardmask that are not covered by the sacrificial cross-grating are removed to form first openings and a third hardmask is disposed into the first openings. Embodiments may then include etching through portions of the second hardmask that are not covered by the sacrificial cross-grating to form second openings. The second openings may be filled with a fourth hardmask. According to an embodiment, the first, second, third, and fourth hardmasks are etch selective to each other. In an embodiment the sacrificial cross-grating may then be removed.

CROSS-REFERENCE TO RELATED APPLICATION

This patent application is a divisional of U.S. patent application Ser.No. 15/575,283, filed Nov. 17, 2017, which is a U.S. National PhaseApplication under 35 U.S.C. § 371 of International Application No.PCT/US2015/038145, filed Jun. 26, 2015, entitled “TEXTILE PATTERNING FORSUBTRACTIVELY-PATTERNED SELF-ALIGNED INTERCONNECTS, PLUGS, AND VIAS,”which designates the United States of America, the entire disclosure ofwhich is hereby incorporated by reference in its entirety and for allpurposes.

FIELD OF THE INVENTION

Embodiments of the present invention relate generally to the manufactureof semiconductor devices. In particular, embodiments of the presentinvention relate to interconnect structures for semiconductor devicesand methods for manufacturing such devices.

BACKGROUND OF THE INVENTION

For the past several decades, the scaling of features in integratedcircuits has been a driving force behind an ever-growing semiconductorindustry. Scaling to smaller and smaller features enables increaseddensities of functional units on the limited real estate ofsemiconductor chips. For example, shrinking transistor size allows forthe incorporation of an increased number of memory or logic devices on achip, lending to the fabrication of products with increased capacity.The drive for ever-more capacity, however, is not without issue. Thenecessity to optimize the performance of each device becomesincreasingly significant.

Integrated circuits commonly include electrically conductivemicroelectronic structures, which are known in the arts as vias, toelectrically connect metal lines or other interconnects above the viasto metal lines or other interconnects below the vias. Vias are typicallyformed by a lithographic process. Representatively, a photoresist layermay be spin coated over a dielectric layer, the photoresist layer may beexposed to patterned actinic radiation through a patterned mask, andthen the exposed layer may be developed in order to form an opening inthe photoresist layer. Next, an opening for the via may be etched in thedielectric layer by using the opening in the photoresist layer as anetch mask. This opening is referred to as a via opening. Finally, thevia opening may be filled with one or more metals or other conductivematerials to form the via.

In the past, the sizes and the spacing of vias has progressivelydecreased, and it is expected that in the future the sizes and thespacing of the vias will continue to progressively decrease, for atleast some types of integrated circuits (e.g., advanced microprocessors,chipset components, graphics chips, etc.). One measure of the size ofthe vias is the critical dimension of the via opening. One measure ofthe spacing of the vias is the via pitch.

When patterning extremely small vias with extremely small pitches bysuch lithographic processes, several challenges present themselves,especially when the pitches are around 70 nanometers (nm) or less and/orwhen the critical dimensions of the via openings are around 35 nm orless. One such challenge is that the overlay between the vias and theoverlying interconnects, and the overlay between the vias and theunderlying landing interconnects, generally need to be controlled tohigh tolerances on the order of a quarter of the via pitch. As viapitches scale ever smaller over time, the overlay tolerances tend toscale with them at an even greater rate than lithographic equipment isable to keep up.

Another such challenge is that the critical dimensions of the viaopenings generally tend to scale faster than the resolution capabilitiesof the lithographic scanners. Shrink technologies exist to shrink thecritical dimensions of the via openings. However, the shrink amounttends to be limited by the minimum via pitch, as well as by the abilityof the shrink process to be sufficiently optical proximity correction(OPC) neutral, and to not significantly compromise line width roughness(LWR) and/or critical dimension uniformity (CDU).

Yet another such challenge is that the LWR and/or CDU characteristics ofphotoresists generally need to improve as the critical dimensions of thevia openings decrease in order to maintain the same overall fraction ofthe critical dimension budget. However, currently the LWR and/or CDUcharacteristics of most photoresists are not improving as rapidly as thecritical dimensions of the via openings are decreasing.

A further such challenge is that the extremely small via pitchesgenerally tend to be below the resolution capabilities of even extremeultraviolet (EUV) lithographic scanners. As a result, commonly two,three, or more different lithographic masks may be used, which tend toincrease the costs. At some point, if pitches continue to decrease, itmay not be possible, even with multiple masks, to print via openings forthese extremely small pitches using EUV scanners.

Thus, improvements are needed in the area of via manufacturingtechnologies.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a perspective view of an interconnect layer with a hardmasklayer that includes two different hardmask materials, according to anembodiment.

FIG. 1B is a perspective view of the interconnect layer of FIG. 1A afterthe formation of sacrificial cross-grating pattern over the two hardmaskmaterials, according to an embodiment.

FIG. 1C is a perspective view of the interconnect layer of FIG. 1B afterportions of the first and second hardmask materials have been removedand a textile patterned hardmask layer that includes four differenthardmask materials has been formed, according to an embodiment.

FIG. 1D is a perspective view of the interconnect layer of FIG. 1C afterthe sacrificial cross-grating pattern has been removed, according to anembodiment.

FIG. 2A is a perspective view of an interconnect layer with a hardmasklayer that includes two different hardmask materials and is covered by abimodal etchstop layer, according to an embodiment.

FIG. 2B is a perspective view of the interconnect layer of FIG. 2A afterthe formation of sacrificial cross-grating pattern over portions of thetwo hardmask materials and the bimodal etchstop layer, according to anembodiment.

FIG. 2C is a perspective view of the interconnect layer of FIG. 2B afterthe exposed portions of the bimodal etchstop layer have been removed,according to an embodiment.

FIG. 2D is a perspective view of the interconnect layer of FIG. 2C afterportions of the first and second hardmask materials have been removedand a textile patterned hardmask layer that includes four differenthardmask materials has been formed, according to an embodiment.

FIG. 2E is a perspective view of the interconnect layer of FIG. 2D afterthe sacrificial cross-grating pattern and the bimodal etchstop layerhave been removed, according to an embodiment.

FIG. 3A is a perspective view of an interconnect layer that includes atextile patterned hardmask that includes four different hardmaskmaterials, according to an embodiment.

FIG. 3B is a perspective view of the interconnect layer of FIG. 3A afterone of the four hardmask materials have been removed, according to anembodiment.

FIG. 3C is a perspective view of the interconnect layer of FIG. 3B afterthe openings in the hardmask layer have been filled with a photoresistmaterial and patterned, according to an embodiment.

FIG. 3D is a perspective view of the interconnect layer of FIG. 3C aftera plug opening has been etched through the interconnect layer, accordingto an embodiment.

FIG. 3E is a perspective view of the interconnect layer of FIG. 3D aftera plug has been formed in the plug opening, and the openings in thehardmask have been filled, according to an embodiment.

FIG. 3F is a perspective view of the interconnect layer of FIG. 3E aftera second one of the four hardmask materials have been removed, accordingto an embodiment.

FIG. 3G is a perspective view and a corresponding cross-sectional viewof the interconnect layer of FIG. 3F after the openings in the hardmasklayer have been filled with a photoresist material and patterned,according to an embodiment.

FIG. 3H is a perspective view and a corresponding cross-sectional viewof the interconnect layer of FIG. 3G after a recess has been formed inthe interconnect layer, according to an embodiment.

FIG. 3I is a perspective view and a corresponding cross-sectional viewof the interconnect layer of FIG. 3I after the recess has been filledwith a dielectric material, according to an embodiment.

FIG. 4A is a perspective view of a plug opening formed through aninterconnect layer, according to an embodiment.

FIG. 4B is a perspective view of a plug formed in the plug openingillustrated in FIG. 4A that allows for the four material textilepatterned hardmask to be reformed, according to an embodiment.

FIG. 5A is a perspective view of an interconnect layer, according to anembodiment.

FIG. 5B is a cross-sectional view of the interconnect layer in FIG. 5A,according to an embodiment.

FIG. 5C is a cross-sectional view of the interconnect layer in FIG. 5Bafter a second metal layer is formed over the interconnect layer,according to an embodiment.

FIG. 5D is a cross-sectional view of the interconnect layer in FIG. 5Cafter the second metal layer is patterned according to an embodiment.

FIG. 6A is a cross-sectional view of the interconnect layer after anextension layer is formed over the exposed portions of a hardmaskmaterial, according to an embodiment.

FIG. 6B is a cross-sectional view of the interconnect layer in FIG. 6Aafter second conductive lines have been formed, according to anembodiment.

FIG. 7 is a cross-sectional illustration of an interposer implementingone or more embodiments of the invention.

FIG. 8 is a schematic of a computing device built in accordance with anembodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

Described herein are systems that include a substrate with multiplelayers with varying compositions and methods of depositing andpatterning such layers. In the following description, various aspects ofthe illustrative implementations will be described using terms commonlyemployed by those skilled in the art to convey the substance of theirwork to others skilled in the art. However, it will be apparent to thoseskilled in the art that the present invention may be practiced with onlysome of the described aspects. For purposes of explanation, specificnumbers, materials and configurations are set forth in order to providea thorough understanding of the illustrative implementations. However,it will be apparent to one skilled in the art that the present inventionmay be practiced without the specific details. In other instances,well-known features are omitted or simplified in order not to obscurethe illustrative implementations.

Various operations will be described as multiple discrete operations, inturn, in a manner that is most helpful in understanding the presentinvention, however, the order of description should not be construed toimply that these operations are necessarily order dependent. Inparticular, these operations need not be performed in the order ofpresentation.

As described above, continued scaling of devices has necessitated thatthe critical dimension and the pitch of via openings formed in aninterconnect layer decrease beyond the traditional capabilities ofstandard back end of line (BEOL) processing equipment. To overcome thelimitations of the existing processing equipment, embodiments of theinvention may utilize an interconnect layer that includes a textilepatterned hardmask. As used herein, a textile patterned hardmask is ahardmask that includes an alternating pattern of two or more hardmaskmaterials formed in a single layer. According to an embodiment, each ofthe hardmask materials may be selectively etched with respect to eachother. For example, a textile patterned hardmask may include fourdifferent hardmask materials. In an embodiment, a textile patternedhardmask may be formed according to the processing operationsillustrated in FIGS. 1A-1D.

Referring now to FIG. 1A, a perspective illustration of an interconnectlayer 100 according to an embodiment is shown. As illustrated, theinterconnect layer 100 includes conductive lines 120 and an interlayerdielectric (ILD) material 110 formed in an alternating pattern.According to an embodiment, the ILD material 110 may be a low-k or anultra low-k dielectric material. By way of example, the ILD material 110may include silicon dioxide, carbon doped silicon dioxide, poroussilicon dioxide, silicon nitrides, or the like. By way of example, theconductive lines 120 may include Ag, Au, Co, Cu, Mo, Ni, NiSi, Pt, Ru,TiN, W, or the like. As illustrated, the conductive lines 120 mayinclude a via portion 121 formed over an interconnect line portion 122.As such, each of the conductive lines 120 may have the potential to forma via 121 at any location. This allows for subtractive patterning toform the vias 121. Subtractively patterning vias 121 allows for the viasto be self-aligned over the interconnect lines 122. Subtractivepatterning of the vias 121 is described in greater detail below. Asillustrated, the interconnect line portion 121 is approximately half theoverall thickness of the conductive lines 120 and the via portion 121forms the remainder of the thickness of the conductive lines 120.However, embodiments of the invention are not limited to suchconfigurations. For example, the thickness of the via portion 122 may beincreased or decreased according to specific design constraints. In FIG.1A the via portions 121 and the interconnect line portions 122 of theconductive lines 120 are separated by a dashed line. It is to beappreciated that the dashed line does not necessarily represent aperceivable border between the two portions. For example, theinterconnect line portions 122 and the via portions 121 may be formedwith the same material and be formed with a single deposition process.According to an embodiment, the formation of the conductive lines 120and the ILD material 110 may include pitch-halving or pitch-quarteringoperations. For example the pitch-halving or pitch-quartering operationsmay be formed with spacer etching operations. Embodiments of theinvention may form tightly pitched features that exceed the limits ofthe BEOL lithography equipment by using a spacer-etching process to formthe conductive lines 120 and the ILD material 110.

In an embodiment, the interconnect layer 100 may be one layer in aBEOL-stack that includes a plurality of interconnect layers. As such,the interconnect layer 100 may be formed over another interconnectlayer. Additional embodiments may include forming the interconnect layer100 as the first interconnect layer over a semiconductor material onwhich one or more transistors or other devices are formed.Implementations of the invention may be formed or carried out on asubstrate, such as a semiconductor substrate. In one implementation, thesemiconductor substrate may be a crystalline substrate formed using abulk silicon or a silicon-on-insulator substructure. In otherimplementations, the semiconductor substrate may be formed usingalternate materials, which may or may not be combined with silicon, thatinclude but are not limited to germanium, indium antimonide, leadtelluride, indium arsenide, indium phosphide, gallium arsenide, indiumgallium arsenide, gallium antimonide, or other combinations of groupIII-V or group IV materials. Although a few examples of materials fromwhich the substrate may be formed are described here, any material thatmay serve as a foundation upon which a semiconductor device may be builtfalls within the scope of the present invention.

In FIG. 1A, a first portion of the textile patterned hardmask layer 140is shown. As illustrated, the textile patterned hardmask layer 140includes a first hardmask material 141 formed over the conductive lines120 and a second hardmask material 142 formed over the ILD material 110.Embodiments of the invention include first and second hardmask materials141, 142 that are etch selective to each other. By way of example, thehardmask materials 141, 142 may include SiOxCyNz materials, SiOXCYmaterials, metal oxide materials, metal nitride materials, or the like.According to an embodiment, the formation of the first and secondhardmask materials 141, 142 may include pitch-halving orpitch-quartering operations. For example the pitch-halving orpitch-quartering operations may be formed with spacer etchingoperations.

Referring now to FIG. 1B, embodiments of the invention include forming asacrificial cross-grating pattern 150 over the textile patternedhardmask layer 140. In an embodiment, the cross-grating pattern 150 isformed substantially orthogonal to the textile patterned hardmask layer140, thereby exposing substantially square regions of each of the firsthardmask material 141 and second hardmask material 142. According to anembodiment, the cross-grating pattern may be formed with pitch-halvingor pitch-quartering operations. By way of example, the sacrificialcross-grating pattern 150 may have substantially the same pitch as thefirst and second hardmask materials 141, 142. Embodiments of theinvention include a cross-grating pattern 150 that is formed from amaterial that is etch-selective to both the first and second hardmaskmaterials 141, 142 in order to function as an etch mask for subsequentprocessing operations. By way of example, the sacrificial cross-gratingpattern 150 may be a carbon hardmask material.

Referring now to FIG. 1C, a perspective illustration of the interconnectlayer 100 after portions of the first and second hardmask materials 141,142 are removed and replaced with third hardmask materials 143 andfourth hardmask materials 144, respectively, is shown according to anembodiment of the invention. In an embodiment, a first etching operationmay selectively remove the exposed portions of the first hardmaskmaterial 141 and be followed with a deposition process that fills theopenings caused by the removal of the first hardmask material 141 with athe third hardmask material 143. By way of example, the etching processmay be a wet or dry etching process, and the deposition process may beany suitable process, such as physical vapor deposition (PVD), chemicalvapor deposition (CVD), atomic layer deposition (ALD), or the like.Overburden of the third hardmask material 143 may then be recessed,(e.g., with an etching process) to provide a thickness of the thirdhardmask material 143 that is substantially similar to the thickness ofthe second hardmask material 142. Thereafter, a second etching operationmay be used to selectively remove the exposed portions of the secondhardmask material 141 and be followed with a deposition process thatfills the openings caused by the removal of the second hardmask material142 with the fourth hardmask material 144. By way of example, theetching process may be a wet or dry etching process, and the depositionprocess may be any suitable process, such as PVD, CVD, ALD, or the like.Overburden of the fourth hardmask material 144 may then be recessed,(e.g., with an etching process) to provide a thickness of the fourthhardmask material 144 that is substantially similar to the thickness ofthe third hardmask material 143. Accordingly, embodiments of theinvention include a textile patterned hardmask layer 140 that iscomprised of four different hardmask materials 141-144 that aresubstantially the same thickness.

Referring now to FIG. 1D, a perspective illustration of the interconnectlayer 100 after the sacrificial cross-grating pattern 150 is removed isshown according to an embodiment of the invention. In an embodiment, thesacrificial cross-grating pattern 150 may be removed with an etchingprocess, or with a polishing operation. As illustrated, the resultingtextile patterned hardmask layer 140 now includes four hardmaskmaterials 141-144 that are each etch selective to each other. Thetextile pattern in the illustrated embodiment is a checkered pattern. Assuch, the four borders of each hardmask material are adjacent to ahardmask material to which it is etch selective. For example, the firsthardmask material 141 is bordered by the third hardmask material 143 ontwo opposite edges and by the second hardmask material 142 on theremaining edges.

According to an additional embodiment of the invention, the formation ofa textile patterned hardmask layer may further comprise forming abimodal etchstop layer over the first and second hardmask materials.Such embodiments allow for the etch-selectivity between the sacrificialcross-grating pattern and the first and second hardmask layers to bereduced. The formation of a textile patterned hardmask layer accordingto such an embodiment is illustrated in FIGS. 2A-2E.

Referring now to FIG. 2A, a perspective view of an interconnect layer200 is shown according to an embodiment of the invention. Theinterconnect layer 200 is substantially similar to the interconnectlayer 100 illustrated in FIG. 1A with the exception that a bimodaletchstop layer 251 is formed over the surface of the first hardmaskmaterial 241 and the second hardmask material 242. According to anembodiment, the bimodal etchstop layer 251 is a material that isremovable with a wet-etching chemistry after it has been exposed to adry etching chemistry. In an embodiment, the bimodal etchstop layer 251may be a metal oxide material. For example, aluminum oxide is one suchmaterial that may be used for the bimodal etchstop layer 251.

Referring now to FIG. 2B, a perspective view of the interconnect layer200 after the formation of the sacrificial cross-grating pattern 250 hasbeen formed is shown according to an embodiment of the invention. Theformation of the sacrificial cross-grating pattern 250 may be formed insubstantially the same way as the sacrificial cross-grating pattern 150is formed in FIG. 2B. During the formation of the sacrificialcross-grating pattern 250, the first and second hardmask materials 141,142 are protected from being etched away by the bimodal etchstop layer251. For example, the sacrificial cross-grating pattern 250 may bepatterned with a dry-etching process (e.g., an ashing process with anoxygen plasma). The dry-etching process does not remove bimodal etchstoplayer 251. Accordingly, the first and second hardmask materials 241, 242remain protected by the bimodal etchstop layer 251 and are preventedfrom being removed by an etching process that is used to pattern thesacrificial cross-grating pattern 250. Furthermore, exposure to theplasma used in the patterning of the sacrificial cross-grating patternrenders the bimodal etchstop layer 251 susceptible to removal with awet-etching chemistry.

Referring now to FIG. 2C, a perspective view of the interconnect layer200 after the bimodal etchstop layer 251 has been removed is shownaccording to an embodiment of the invention. According to an embodiment,the bimodal etchstop layer 251 may be removed with a wet-etchingchemistry. In such embodiments, the first and second hardmask materials241, 242 are not etched substantially by the wet-etching chemistry usedto remove the bimodal etchstop layer 251. As such, portions of the firstand second hardmask materials 241, 242 may be exposed between thesacrificial cross-grating pattern 250 even with limited etch-selectivitybetween the sacrificial cross-grating pattern 250 and the first andsecond hardmask materials 241, 242.

Referring to FIG. 2D, a perspective view of the interconnect layer 200after the exposed portions of the first and second hardmask materials241, 242 are replaced with third hardmask materials 243 and fourthhardmask materials 244, respectively, are shown according to anembodiment of the invention. The replacement of the first and secondhardmask materials 241, 242 may be performed in substantially the samemanner as described with respect to FIG. 1C. For example, a firstetching operation may selectively remove the exposed portions of thefirst hardmask material 241 and be followed with a deposition processthat fills the openings caused by the removal of the first hardmaskmaterial 241 with a the third hardmask material 243. The third hardmaskmaterial 243 may then be recessed to be substantially the same thicknessas the second hardmask material 242. Thereafter, a second etchingoperation may be used to selectively remove the exposed portions of thesecond hardmask material 241 and be followed with a deposition processthat fills the openings caused by the removal of the second hardmaskmaterial 242 with the fourth hardmask material 244. The fourth hardmaskmaterial 244 may then be recessed to be substantially the same thicknessas the third hardmask material 243. Accordingly, embodiments of theinvention include a textile patterned hardmask layer 240 that iscomprised of four different hardmask materials 241-244 that aresubstantially the same thickness.

Referring now to FIG. 2E, a perspective illustration of the interconnectlayer 200 after the sacrificial cross-grating layer 250 and the bimodaletchstop layer 251 are removed is shown according to an embodiment.Embodiments of the invention may include a two-part etching process toremove the sacrificial cross-grating layer 250 and the bimodal etchstoplayer 251. According to an embodiment, the sacrificial cross-gratinglayer 250 may first be removed with an ashing process that includes anoxygen plasma. As such, the bimodal etchstop layer 251 is exposed to aplasma that renders the bimodal etchstop layer 251 susceptible toremoval with a wet-etching chemistry. Thereafter, an etching processthat utilizes a wet etching chemistry may be used to remove theremaining portions of the bimodal etchstop layer 251. Accordingly, aninterconnect layer 200 with a textile patterned hardmask layer 240substantially similar to the interconnect layer 100 described withrespect to FIG. 1D is formed.

Embodiments of the invention that include a textile patterned hardmasklayer, such as the ones described above allow for substantial benefitswith respect to self-alignment of various features that are formed in aninterconnect layer. Due to the self-alignment, the limitations ofphotolithography equipment and photoresist materials, such as thosedescribed above, do not prevent the formation of tightly pitchedfeatures and small critical dimensions (e.g., pitches that are less than70 nm and critical dimensions that are less than 35 nm). For example,the use of lithography tools to align one layer to another inherentlyincludes edge placement error. As such, embodiments of the invention areable to reliably pattern interconnect lines and vias that have pitchesand critical dimensions that are that are smaller than the pitch andcritical dimension limits presently achievable with known lithographyprocessing operations. For example, substractively patterning vias andplugs in conjunction with textile patterned hardmask layers according toembodiments of the invention allow for the vias and plugs to beself-aligned with underlying interconnect lines. Additionally,substractively patterning vias and plugs with a textile patternedhardmask layer according to embodiments of the invention allows for thevias and plugs to be self-aligned with each other. Furthermore, afterthe vias and plugs of a given interconnect layer have been patterned,embodiments of the invention utilize the textile patterned hardmasklayer to self-align a subsequently formed interconnect layer with theprevious interconnect layer.

The process of forming substractively patterned vias and plugs that areself-aligned to an interconnect line with a textile patterned hardmasklayer is illustrated with respect to FIGS. 3A-3I, according toembodiments of the invention.

Referring now to FIG. 3A, a perspective view of an interconnect layer300 that includes a textile patterned hardmask layer 340 according to anembodiment of the invention is shown. As illustrated, the interconnectlayer 300 includes conductive lines 320 and ILD material 310 formed inan alternating pattern. According to an embodiment, the ILD material 310may be a low-k or an ultra low-k dielectric material. By way of example,the ILD material 310 may include silicon dioxide, carbon doped silicondioxide, porous silicon dioxide, silicon nitrides, or the like. By wayof example, the conductive lines may include conductive materials suchas Ag, Au, Co, Cu, Mo, Ni, NiSi, Pt, Ru, TiN, W, or the like. Asillustrated, the conductive lines 320 may include an interconnect lineportion 322 and a via portion 321 formed over the interconnect lineportion 322. As such, each of the conductive lines may have thepotential to form a via 321 at any location. This allows for subtractivepatterning to form the vias 321. Since the vias 321 will besubstractively patterned, the vias will be self-aligned over theinterconnect lines 322. As illustrated, the interconnect line portion321 is approximately half the overall thickness of the conductive lines320 and the via portion 321 forms the remainder of the thickness of theconductive lines 320. However, embodiments of the invention are notlimited to such configurations. For example, the thickness of the viaportion 322 may be increased or decreased according to specific designconsiderations. According to an embodiment, the formation of theconductive lines 320 and the ILD material 310 may include pitch-halvingor pitch-quartering operations. For example the pitch-halving orpitch-quartering operations may be formed with spacer etchingoperations. In an embodiment, the interconnect layer 300 may be formedover another interconnect layer. Additional embodiments may includeforming the interconnect layer 300 as the first interconnect layer overa semiconductor material on which one or more transistors or otherdevices are formed.

The interconnect layer in FIG. 3A also includes a textile patternhardmask layer 340 formed over the top surfaces of the conductive lines320 and the ILD material 310. According to an embodiment of theinvention, the textile patterned hardmask layer 340 is substantiallysimilar to the textile patterned hardmask layer described above withrespect to FIG. 1D. Accordingly, embodiments of the invention include atextile patterned hardmask layer 340 that includes four hardmaskmaterials 341-344 that are each etch selective to each other. Thetextile pattern in the illustrated embodiment is a checkered pattern. Assuch, the four borders of each hardmask material are adjacent to ahardmask material to which it is etch selective. For example, the firsthardmask material 341 is bordered by the third hardmask material 343 ontwo opposite edges and by the second hardmask material 342 on theremaining edges.

Referring now to FIG. 3B, a perspective view of the interconnect layer300 after the first hardmask material 341 has been removed is shownaccording to an embodiment. In an embodiment, the first hardmaskmaterial 341 is removed with an etching process that selectively removesonly the first hardmask material 341. Accordingly, the etching processleaves the remaining hardmask materials 342-344 substantially the samethickness. The removal of the first hardmask material 341 produces firstopenings 361 through the textile patterned hardmask layer 340. Asillustrated, the first openings 361 are self-aligned over the conductivelines 320. Accordingly, an etch-mask that has sidewalls 370 that arealigned with the sidewalls of the conductive lines 320 is formed.

Referring now to FIG. 3C, a perspective view of the interconnect layer300 after a photoresist material 380 has been deposited into each of thefirst openings 361 and patterned is shown according to an embodiment ofthe invention. According to an embodiment, the photoresist material 380may be any suitable photoresist material. By way of example, thephotoresist material may be a positive or negative photoresist material.Embodiments of the invention may include a chemically amplifiedphotoresist (CAR) material. In an embodiment, the photoresist material380 may be spun on to the interconnect layer 300. After the photoresistmaterial 380 has been deposited, the photoresist material may bepatterned to expose selected openings 361 where a plug opening 361P isdesired. While a single plug opening is illustrated in FIG. 3C, it is tobe appreciated that more than one plug opening may be formed accordingto embodiments of the invention. Furthermore, though not illustrated inFIG. 3C, embodiments of the invention may further comprise a metalrecessing operation prior to the deposition of the photoresist material380 in order to recess the exposed portions of the conductive lines 320.A metal recess operation such as this may reduce the possibility thatthe top surface of the conductive lines 320 may contact interconnectlines in a subsequently formed interconnect layer and create an unwantedshort-circuit between conductive features.

Depositing the photoresist material 380 into the first openings 361 hasseveral advantages. First, the sidewalls 370 reduce the need to controlthe line width roughness of the photoresist material 380. For example,once the photoresist material is cleared from the opening 361 (e.g.,with a photoresist patterning operation) the sidewalls 370 of thetextile patterned hardmask layer 340 serve as the etch mask instead ofremaining portions of the photoresist material 380. Additionally, it isto be appreciated that each of the openings 361 are spaced apart fromeach other by remaining portions of the textile patterned hardmask 340.As such, the openings in a photomask (not shown) used to pattern thephotoresist material do not need to be perfectly aligned with an opening361 that is desired to be patterned. Therefore, the margin of error inthe overlay between the photomask and the interconnect layer 300 isincreased. For example, margin of error in the overlay may be twice aslarge or larger with respect to photolithography operations that formvias and plugs when a textile patterned hardmask layer is not used.

Referring now to FIG. 3D, a perspective view of an interconnect layer300 after a portion of the conductive line 320 below the plug opening361P is removed is shown according to an embodiment of the invention. Inan embodiment the portion of the conductive line 320 may be removed withan etching process. By way of example, the etching process may be a wetor dry etching process suitable for removing the material that forms theconductive line 320 and that is selective to the remaining hardmaskmaterials in the textile patterned hardmask layer 340. As illustrated inFIG. 3D, the plug opening 361P is substantially aligned with theremaining portions of the conductive line 320 that are covered by thetextile patterned hardmask layer 340 and the unpatterned photoresistmaterial 380. Accordingly, embodiments of the invention reduce the riskof shorting between interconnect lines that may otherwise occur if theplug opening is misaligned with the conductive line 320.

Referring now to FIG. 3E, a perspective view of an interconnect layer300 after the photoresist material 380 has been removed and a plug 355has been deposited in the plug opening 361P according to an embodimentof the invention. According to an embodiment, the plug 355 may be asuitable low-k or ultra low-k dielectric material. In the illustratedembodiment, the plug 355 may be formed with the same dielectric materialthat was used to from the second dielectric material 342 in the textilepatterned hardmask layer 340. In an embodiment, the deposition processused to form the plug 355 is a blanket deposition process, andtherefore, the second dielectric material 342 may also be deposited ineach of the openings 361. Embodiments of the invention include recessingthe overburden from the deposition of the second dielectric material 342such that the top surface of the second dielectric material 342 issubstantially planar with the top surface of the textile patternedhardmask layer 340. As illustrated, the blanket deposition of the seconddielectric material 342 allows for rows of the second dielectricmaterial 342 to be reformed in the textile patterned hardmask layer 340.

Referring now to FIG. 3F, a perspective view of an interconnect layer300 after the third dielectric material 343 has been removed from thetextile patterned hardmask layer 340 is shown according to anembodiment. In an embodiment, the third hardmask material 343 may beremoved with an etching process that selectively removes the thirdhardmask material 343 while leaving the remaining portions of thetextile patterned hardmask layer 340 behind. By way of example, theetching process may be a wet or dry etching process. Accordingly, secondopenings 362 may be formed through the textile patterned hardmask layer340. Similar to the openings 361 described above, the second openingsmay be defined by sidewalls 370 that are aligned with the sidewalls ofthe conductive line 320.

Referring now to FIG. 3G a perspective view and a cross-sectional viewalong line A-A′ of the perspective view are illustrated that show aninterconnect layer 300 after photoresist material 380 has been depositedinto each of the second openings 362 and selected second openings 362are patterned to remove the photoresist material 380, according to anembodiment of the invention. According to an embodiment, the photoresistmaterial 380 may be any suitable photoresist material, such as thosedescribed above. The photoresist material 380 may be spun on to theinterconnect layer 300. After the photoresist material 380 has beendeposited, the photoresist material may be patterned to expose selectedsecond openings 362 where a via opening 362 o is desired. While a singlevia opening is illustrated in FIG. 3G, it is to be appreciated that morethan one via opening may be formed according to embodiments of theinvention. Furthermore, though not illustrated in FIG. 3G, embodimentsof the invention may further comprise a metal recessing operationperformed prior to the deposition of the photoresist material 380 inorder to recess the exposed portions of the conductive lines 320. Ametal recess operation such as this may reduce the possibility that thetop surface of the conductive lines 320 may contact a subsequentinterconnect lines in a subsequently formed interconnect layer andcreate an unwanted short-circuit between conductive features.

As illustrated in the cross-sectional view along line A-A′ theconductive line 320 includes an interconnect line portion 322 and a viaportion 321 along the entire length of the conductive line 320.Accordingly, a via 321 may be formed at any desired location along theconductive line 320. The vias 321 are formed by covering portions of theconductive line 320 wherever a via 321 is desired. For example, the viaopening 362 o is formed where the via portion 321 is desired to beremoved. This process of removing via portions 321 in order to definethe vias 321 that are desired to remain in the final device may bereferred to herein as subtractive via patterning.

Referring now to FIG. 3H, a perspective view and a cross-sectional viewalong line A-A′ of the perspective view are illustrated that show aninterconnect layer 300 after the via portion 321 of the conductive line320 is removed in the opening 362 o, according to an embodiment of theinvention. According to an embodiment, the conductive line may be etchedwith a wet or dry etching process. Subsequent to the removal of the viaportion 321 in the opening 362 o, the photoresist material may beremoved (e.g., with an ashing process) and the forth dielectric material344 may be removed (e.g., with a wet or dry etching process).

Referring now to FIG. 3I, a perspective view and a cross-sectional viewalong line A-A′ of the perspective view are illustrated that show theinterconnect layer 300 after the opening 362 o has been filled with adielectric material 311. By way of example, the dielectric material 311may be the same dielectric material used to form the ILD 310 material.Thereafter, any overburden of the dielectric material 311 may berecessed such that a top surface of the dielectric fill material 311 issubstantially coplanar with the neighboring conductive lines 320,according to an embodiment. As illustrated, the lines of the seconddielectric material 342 may extend above portions of the interconnectlayer 300, and may be visible in a finished microelectronic device,according to an embodiment. Such embodiments may be beneficial forseveral reasons. First, the second dielectric material 342 may increasethe shorting margins between interconnect lines in a subsequently formedinterconnect layer. Additionally, the second dielectric material 342 mayfunction as a template that allows for aligning subsequently formedinterconnect layers. Examples of each of these benefits will bedescribed in greater detail below.

According to an additional embodiment of the invention, the textilepatterned hardmask layer may be returned to a four-material checkeredhardmask layer after each iteration of etching through the conductivelines (either for the formation of plugs 355 or for the definition ofvias 321). Such an embodiment is described with respect to FIGS. 4A-4B.

Referring now to FIG. 4A, a perspective view of an interconnect layer400 after a portion of the conductive line 420 below a plug opening 461pis removed is shown according to an embodiment of the invention. Theinterconnect layer 400 illustrated in FIG. 4A may be formed insubstantially the same manner as the interconnect structure 300illustrated in FIG. 3D. Referring now to FIG. 4B, a perspective view ofan interconnect layer 400 after the plug 455 has been formed is shownaccording to an embodiment of the invention. Unlike the plug 355 formedin FIG. 3E, the plug 455 in FIG. 4B is formed with the first dielectricmaterial 441. Additionally, the first openings that are formed when thephotoresist material 480 is removed are refilled with the firstdielectric material 441 during the formation of the plug 455. Therefore,the textile patterned hardmask layer 440 is returned to a four-materialcheckered pattern. Accordingly, self-aligned subtractive patterning maybe repeated as many times as necessary in order to form plugs and viasat desired locations.

As described above with respect to FIG. 3I, embodiments of the inventionmay further utilize portions of the second dielectric material thatextend above the dielectric lines and the conductive lines in order toincrease the shorting margin of interconnect lines formed in the nextinterconnect layer. Such an embodiment is described with respect toFIGS. 5A-5D.

Referring now to FIG. 5A, a perspective view of an interconnect layer500 is illustrated according to an embodiment of the invention. Asillustrated, the interconnect layer 500 includes a plug 555.Additionally, FIG. 5B illustrates a cross-sectional view along line B-B′in FIG. 5A and shows that vias 521 are separated by a dielectric fillmaterial 511. The plug 555 and the dielectric fill material 511 thatdefines vias 521 may be formed with processing operations similar tothose described above with respect to FIGS. 3A-3I. As illustrated inFIGS. 5A and 5B, the second dielectric material 542 extends above thetop surfaces of the dielectric lines 510 and the conductive lines 520.

Referring now to FIG. 5C, a cross-sectional illustration along line B-B′of an interconnect layer 500 after the deposition of a subsequentconductive layer 528 is shown according to an embodiment of theinvention. By way of example, the subsequent conductive layer 528 may bea metallic material (e.g., Ag, Au, Co, Cu, Mo, Ni, NiSi, Pt, Ru, TiN, W,or the like) or a semiconductive material (e.g., silicon, a dopedsilicon, or the like). In order to allow for subtractive patterning inthe subsequent conductive layer 528, embodiments of the inventioninclude depositing the subsequent conductive layer 528 to have athickness T suitable for forming both the subsequent interconnect lines525 and the subsequent vias 524. By way of example, the thickness T maybe on approximately the same value as the pitch between interconnectlines 522, though embodiments are not limited to such configurations.For example, the thickness T may be greater than or less than the pitchbetween interconnect lines.

Referring now to FIG. 5D, a cross-sectional illustration along line B-B′of an interconnect layer 500 after the subsequent conductive layer 528has been patterned to form individual conductive lines 523 is shownaccording to an embodiment of the invention. According to embodiments ofthe invention, the conductive lines 523 may be misaligned from the vias521. However, risk of short circuiting to underlying circuitry isminimized because the second dielectric material 542 increases theshorting margin M. Accordingly, even when the subsequent layer ismisaligned, the presence of the second dielectric material 542 decreasesthe possibility of a short circuit between interconnect layers.

As described above with respect to FIG. 3I, embodiments of the inventionmay further utilize portions of the second dielectric material thatextend above the dielectric lines and the conductive lines as a templatein order to self-align the subsequently formed interconnect layer. Suchan embodiment is described with respect to FIGS. 6A-6B.

Referring now to FIG. 6A, a cross-sectional illustration of aninterconnect layer 600 is shown according to an embodiment of theinvention. The interconnect layer 600 is substantially similar to theinterconnect layer 500 illustrated in FIG. 5B with the exception that anextension layer 639 is formed over the second dielectric material 642.According to an embodiment, the extension layer 639 is selectivelyformed over the second dielectric material 642 with a selective growthprocess that uses the topography of the second dielectric material 642(i.e., the difference in height between the second dielectric material642 and the height of the conductive lines 320) or with a directedself-assembly (DSA) process that utilizes the differences in materialsthat form the layers. By way of example, DSA processes may beimplemented with a diblock copolymer, such aspolystyrene-b-polymethylmethacrylate (PS-b-PMMA). Additional embodimentsmay utilize self-segregating combinations of homopolymers. Embodimentsmay also utilize polymer brushes selectively anchored to one of thematerials to guide DSA processes. According to an embodiment, theextension layer 639 has a thickness T that allows for the deposition ofa subsequent conductive line 623 that is thick enough to form the nextlayer vias 625, the next layer interconnect lines 624, and the nextlayer hardmask 641.

Referring now to FIG. 6B, a cross-sectional illustration of aninterconnect layer 600 after the next layer conductive lines 623 and thenext layer hardmask 645 have been formed. According to an embodiment,the next layer conductive lines 623 may be formed with a blanketdeposition process of a metal (e.g., Ag, Au, Co, Cu, Mo, Ni, NiSi, Pt,Ru, TiN, W, or the like) or a semiconductor material (e.g., silicon,doped silicon, or the like). After the blanket deposition, the nextlayer conductive lines 623 may be recessed and the next layer hardmask641 may be deposited and planarized with the top surface of theextension layer 639. In an embodiment, the extension layer 639 and thenext layer hardmask 641 may then be further patterned to form a textilepatterned hardmask with four hardmask materials, such as those describedabove. In an embodiment, the extension layer 639 may also be etched awayand replaced with a different dielectric material that may be useful forforming the textile patterned hardmask.

As illustrated in FIG. 6B, the next layer conductive lines areself-aligned with the vias 621 of the lower interconnect layer. Asillustrated, the sidewalls of the next layer conductive lines 623 arealigned with the sidewalls of the vias 621. Accordingly, overlay errorbetween the interconnect layers may be reduced or eliminated, and thefabrication of an interconnect layer stack (i.e., the BEOL-stack) is notdependent on limitations of photolithography equipment.

FIG. 7 illustrates an interposer 700 that includes one or moreembodiments of the invention. The interposer 700 is an interveningsubstrate used to bridge a first substrate 702 to a second substrate704. The first substrate 702 may be, for instance, an integrated circuitdie. The second substrate 704 may be, for instance, a memory module, acomputer motherboard, or another integrated circuit die. Generally, thepurpose of an interposer 700 is to spread a connection to a wider pitchor to reroute a connection to a different connection. For example, aninterposer 700 may couple an integrated circuit die to a ball grid array(BGA) 706 that can subsequently be coupled to the second substrate 704.In some embodiments, the first and second substrates 702/704 areattached to opposing sides of the interposer 700. In other embodiments,the first and second substrates 702/704 are attached to the same side ofthe interposer 700. And in further embodiments, three or more substratesare interconnected by way of the interposer 700.

The interposer 700 may be formed of an epoxy resin, afiberglass-reinforced epoxy resin, a ceramic material, or a polymermaterial such as polyimide. In further implementations, the interposermay be formed of alternate rigid or flexible materials that may includethe same materials described above for use in a semiconductor substrate,such as silicon, germanium, and other group III-V and group IVmaterials.

The interposer may include metal interconnects 708 and vias 710,including but not limited to through-silicon vias (TSVs) 712. Theinterposer 700 may further include embedded devices 714, including bothpassive and active devices. Such devices include, but are not limitedto, capacitors, decoupling capacitors, resistors, inductors, fuses,diodes, transformers, sensors, and electrostatic discharge (ESD)devices. More complex devices such as radio-frequency (RF) devices,power amplifiers, power management devices, antennas, arrays, sensors,and MEMS devices may also be formed on the interposer 700.

In accordance with embodiments of the invention, apparatuses thatinclude subtractively patterned self-aligned interconnects plugs andvias formed with a textile patterned hardmask or processes for formingsuch devices disclosed herein may be used in the fabrication ofinterposer 700.

FIG. 8 illustrates a computing device 800 in accordance with oneembodiment of the invention. The computing device 800 may include anumber of components. In one embodiment, these components are attachedto one or more motherboards. In an alternate embodiment, thesecomponents are fabricated onto a single system-on-a-chip (SoC) dierather than a motherboard. The components in the computing device 800include, but are not limited to, an integrated circuit die 802 and atleast one communication chip 808. In some implementations thecommunication chip 808 is fabricated as part of the integrated circuitdie 802. The integrated circuit die 802 may include a CPU 804 as well ason-die memory 806, often used as cache memory, that can be provided bytechnologies such as embedded DRAM (eDRAM) or spin-transfer torquememory (STTM or STTM-RAM).

Computing device 800 may include other components that may or may not bephysically and electrically coupled to the motherboard or fabricatedwithin an SoC die. These other components include, but are not limitedto, volatile memory 810 (e.g., DRAM), non-volatile memory 812 (e.g., ROMor flash memory), a graphics processing unit 814 (GPU), a digital signalprocessor 816, a crypto processor 842 (a specialized processor thatexecutes cryptographic algorithms within hardware), a chipset 820, anantenna 822, a display or a touchscreen display 824, a touchscreencontroller 826, a battery 828 or other power source, a power amplifier(not shown), a global positioning system (GPS) device 828, a compass830, a motion coprocessor or sensors 832 (that may include anaccelerometer, a gyroscope, and a compass), a speaker 834, a camera 836,user input devices 838 (such as a keyboard, mouse, stylus, andtouchpad), and a mass storage device 840 (such as hard disk drive,compact disk (CD), digital versatile disk (DVD), and so forth).

The communications chip 808 enables wireless communications for thetransfer of data to and from the computing device 800. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. The communication chip 808 may implement anyof a number of wireless standards or protocols, including but notlimited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE,GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well asany other wireless protocols that are designated as 3G, 4G, 5G, andbeyond. The computing device 800 may include a plurality ofcommunication chips 808. For instance, a first communication chip 808may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 808 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

The processor 804 of the computing device 800 includes one or moredevices, such as transistors that are coupled to one or moreself-aligned interconnect lines, vias, or plugs that are formed in aninterconnect structure that that are formed with a subtractivepatterning operation that utilizes a textile patterned hardmask layer,according to an embodiment of the invention. The term “processor” mayrefer to any device or portion of a device that processes electronicdata from registers and/or memory to transform that electronic data intoother electronic data that may be stored in registers and/or memory.

The communication chip 808 may also include one or more devices, such astransistors that are coupled to one or more self-aligned interconnectlines, vias, or plugs that are formed in an interconnect structure thatthat are formed with a subtractive patterning operation that utilizes atextile patterned hardmask layer, according to an embodiment of theinvention.

In further embodiments, another component housed within the computingdevice 800 may contain one or more devices, such as transistors that arecoupled to one or more self-aligned interconnect lines, vias, or plugsthat are formed in an interconnect structure that that are formed with asubtractive patterning operation that utilizes a textile patternedhardmask layer, according to an embodiment of the invention.

In various embodiments, the computing device 800 may be a laptopcomputer, a netbook computer, a notebook computer, an ultrabookcomputer, a smartphone, a tablet, a personal digital assistant (PDA), anultra mobile PC, a mobile phone, a desktop computer, a server, aprinter, a scanner, a monitor, a set-top box, an entertainment controlunit, a digital camera, a portable music player, or a digital videorecorder. In further implementations, the computing device 800 may beany other electronic device that processes data.

The above description of illustrated implementations of the invention,including what is described in the Abstract, is not intended to beexhaustive or to limit the invention to the precise forms disclosed.While specific implementations of, and examples for, the invention aredescribed herein for illustrative purposes, various equivalentmodifications are possible within the scope of the invention, as thoseskilled in the relevant art will recognize.

These modifications may be made to the invention in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the invention to the specific implementationsdisclosed in the specification and the claims. Rather, the scope of theinvention is to be determined entirely by the following claims, whichare to be construed in accordance with established doctrines of claiminterpretation.

Embodiments of the invention include a method of forming a textilepatterned hardmask, comprising: forming a first hardmask material and asecond hardmask material over a top surface of an interconnect layer inan alternating pattern, wherein the first hardmask material and thesecond hardmask material are etch selective to each other; forming asacrificial cross-grating over the first and second hardmask materials;etching through portions of the first hardmask material that are notcovered by the sacrificial cross-grating to form first openings;disposing a third hardmask material into the first openings, wherein thethird hardmask material is etch selective to the first and the secondhardmask materials; etching through portions of the second hardmaskmaterial that are not covered by the sacrificial cross-grating to formsecond openings; disposing a fourth hardmask material into the secondopenings, wherein the fourth hardmask material is etch selective to thefirst, the second, and the third hardmask materials; and removing thesacrificial cross-grating.

Additional embodiments include a method for forming a textile patternedhardmask that further comprises: forming a bimodal etchstop layer overthe first and second hardmask materials prior to forming the sacrificialcross-grating, wherein the bimodal etchstop layer is removable with awet-etching chemistry after it has been exposed to a dry etchingchemistry.

Additional embodiments include a method for forming a textile patternedhardmask, wherein the forming the sacrificial cross-grating comprises:depositing a sacrificial mask layer over the top surface of the bimodaletchstop layer; patterning the sacrificial mask layer with a dry-etchingprocess to form the sacrificial cross-grating; and removing the bimodaletchstop layer with a wet-etching chemistry.

Additional embodiments include a method for forming a textile patternedhardmask, wherein the first, second, third, and fourth hardmaskmaterials are each different materials selected from a group of SiOXCYNZmaterials, SiOXCY materials, metal oxide materials, and metal nitridematerials.

Additional embodiments include a method for forming a textile patternedhardmask, wherein the sacrificial cross grating is formed from amaterial that is etch selective to the first and second hardmaskmaterials.

Additional embodiments include a method for forming a textile patternedhardmask, wherein the sacrificial cross grating is a carbon hardmaskmaterial.

Embodiments of the invention include an interconnect structurecomprising: an interlayer dielectric (ILD) material; an interconnectline formed adjacent to the ILD material; and one or more vias formedover a top surface of the interconnect line, wherein a sidewall of thevia is aligned with a sidewall of the interconnect line, and whereinportions of the top surface of the interconnect line that are notcovered by a via are covered by a dielectric fill material.

Additional embodiments include an interconnect structure, furthercomprising one or more dielectric lines formed over a top surface of theILD material, wherein the dielectric lines extend in a directionorthogonal to a direction the interconnect line extends.

Additional embodiments include an interconnect structure, wherein one ofthe plurality of dielectric lines passes over a top surface of thedielectric fill material.

Additional embodiments include an interconnect structure, wherein afirst dielectric line includes a sidewall that is aligned with a firstsidewall of a first via, and wherein a second dielectric line includes asidewall that is aligned with a second sidewall of the first via that isopposite to the first sidewall of the first via.

Additional embodiments include an interconnect structure, furthercomprising an extension layer formed over a top surface of the firstdielectric line and a top surface of the second dielectric line.

Additional embodiments include an interconnect structure, furthercomprising a second interconnect line formed over the first via andbetween the first dielectric line and the second dielectric line.

Additional embodiments include an interconnect structure, wherein theextension layer is formed with a directed self-assembly (DSA) process.

Additional embodiments include an interconnect structure, wherein theextension layer is one block of a diblock copolymer.

Additional embodiments include an interconnect structure, furthercomprising a second interconnect line formed partially above one of thedielectric lines and partially over the first via.

Additional embodiments include an interconnect structure, wherein afirst of the dielectric lines is formed over the dielectric fillmaterial, and wherein a second interconnect line is formed partiallyover the first dielectric line and partially over the ILD material.

Additional embodiments include an interconnect structure, furthercomprising a dielectric plug adjacent to the interconnect line, whereina sidewall of the interconnect line is aligned with a sidewall of thedielectric plug.

Additional embodiments include an interconnect structure, wherein thedielectric fill material is the same material as the ILD material.

Embodiments of the invention include a method of forming self-alignedfeatures in an interconnect layer, comprising: forming first maskopenings in a hardmask layer formed over the interconnect layer thatincludes four hardmask materials arranged in a checkered pattern byremoving a first hardmask material with a first etching process;depositing a photoresist material in the first mask openings; removingthe photoresist material from one or more of the openings with aphotoresist patterning process to expose a top surface of a conductiveline in the interconnect layer, wherein the conductive line includes avia portion formed over an interconnect line portion; removing theexposed via portion with an etching process; and depositing a dielectricfill material into the opening to replace the removed portion of theconductive line.

Additional embodiments include a method of forming self-aligned featuresin an interconnect layer, wherein the first hardmask material and athird hardmask material of the hardmask layer are formed in analternating pattern along the top surface of the conductive line, andwherein a second hardmask material and a fourth hardmask material of thehardmask layer are formed in an alternating pattern along a top surfaceof an interlayer dielectric (ILD) material formed in the interconnectlayer.

Additional embodiments include a method of forming self-aligned featuresin an interconnect layer, wherein a first sidewall of the dielectricfill material is aligned with a first sidewall of the conductive line,and wherein a second sidewall of the dielectric fill material is alignedwith a second sidewall of the conductive line.

Additional embodiments include a method of forming self-aligned featuresin an interconnect layer, wherein the first, second, third, and fourthhardmask materials are etch selective to each other.

Additional embodiments include a method of forming self-aligned featuresin an interconnect layer, wherein the first, second, third, and fourthhardmask materials are each different materials selected from a group ofSiOXCYNZ materials, SiOXCY materials, metal oxide materials, and metalnitride materials.

Additional embodiments include a method of forming self-aligned featuresin an interconnect layer, further comprising: removing the interconnectline portion below the removed via portion, wherein the dielectric fillmaterial forms a plug that completely intersects the conductive line.

Additional embodiments include a method of forming self-aligned featuresin an interconnect layer, wherein the dielectric fill material is thesame material as the first dielectric material.

What is claimed is:
 1. A method of forming a textile patterned hardmask,comprising: forming a first hardmask material and a second hardmaskmaterial over a top surface of an interconnect layer in an alternatingpattern, wherein the first hardmask material and the second hardmaskmaterial are etch selective to each other; forming a sacrificialcross-grating over the first and second hardmask materials; etchingthrough portions of the first hardmask material that are not covered bythe sacrificial cross-grating to form first openings; disposing a thirdhardmask material into the first openings, wherein the third hardmaskmaterial is etch selective to the first and the second hardmaskmaterials; etching through portions of the second hardmask material thatare not covered by the sacrificial cross-grating to form secondopenings; disposing a fourth hardmask material into the second openings,wherein the fourth hardmask material is etch selective to the first, thesecond, and the third hardmask materials; and removing the sacrificialcross-grating.
 2. The method of claim 1, further comprising: forming abimodal etchstop layer over the first and second hardmask materialsprior to forming the sacrificial cross-grating, wherein the bimodaletchstop layer is removable with a wet-etching chemistry after it hasbeen exposed to a dry etching chemistry.
 3. The method of claim 2,wherein the forming the sacrificial cross-grating comprises: depositinga sacrificial mask layer over the top surface of the bimodal etchstoplayer; patterning the sacrificial mask layer with a dry-etching processto form the sacrificial cross-grating; and removing the bimodal etchstoplayer with a wet-etching chemistry.
 4. The method of claim 1, whereinthe first, second, third, and fourth hardmask materials are eachdifferent materials selected from a group of SiO_(x)C_(y)N_(z)materials, SiO_(X)C_(Y) materials, metal oxide materials, and metalnitride materials.
 5. The method of claim 1, wherein the sacrificialcross grating is formed from a material that is etch selective to thefirst and second hardmask materials.
 6. The method of claim 5, whereinthe sacrificial cross grating is a carbon hardmask material.
 7. A methodof forming self-aligned features in an interconnect layer, comprising:forming first mask openings in a hardmask layer formed over theinterconnect layer that includes four hardmask materials arranged in acheckered pattern by removing a first hardmask material with a firstetching process; depositing a photoresist material in the first maskopenings; removing the photoresist material from one or more of theopenings with a photoresist patterning process to expose a top surfaceof a conductive line in the interconnect layer, wherein the conductiveline includes a via portion formed over an interconnect line portion;removing the exposed via portion with an etching process; and depositinga dielectric fill material into the opening to replace the removedportion of the conductive line.
 8. The method of claim 7, wherein thefirst hardmask material and a third hardmask material of the hardmasklayer are formed in an alternating pattern along the top surface of theconductive line, and wherein a second hardmask material and a fourthhardmask material of the hardmask layer are formed in an alternatingpattern along a top surface of an interlayer dielectric (ILD) materialformed in the interconnect layer.
 9. The method of claim 8, wherein afirst sidewall of the dielectric fill material is aligned with a firstsidewall of the conductive line, and wherein a second sidewall of thedielectric fill material is aligned with a second sidewall of theconductive line.
 10. The method of claim 8, wherein the first, second,third, and fourth hardmask materials are etch selective to each other.11. The method of claim 10, wherein the first, second, third, and fourthhardmask materials are each different materials selected from a group ofSiO_(X)C_(Y)N_(Z) materials, SiO_(X)C_(Y) materials, metal oxidematerials, and metal nitride materials.
 12. The method of claim 7,further comprising: removing the interconnect line portion below theremoved via portion, wherein the dielectric fill material forms a plugthat completely intersects the conductive line.
 13. The method of claim7, wherein the dielectric fill material is the same material as thefirst dielectric material.